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Bc327 october © fairchild semiconductor corporation www. definition advance information switching and amplifier applications · suitable for af- driver stages and low to- 92 power output · complement to bc337/ bc338 stages absolute maximum a= 25 ratings ( t ° c) characteristic symbolratingunit collector- emittervces voltage : bc: bccollector- emittervceo voltage : bc327 - 45. pnp epitaxial silicon transistor. 1 specifications vceo ( v) vcbo maximum ( v) ic ( a) hfe minimum at ic = 2ma ft minimum ( mhz) ptot ( mw) package part number 45 50 0. 8a 3- pin to- 92 bulk - boxed product ( development kits). maximum ratings applied to the device are individual stress limit values ( bc327 datasheet pdf not normal operating conditions) and are not valid simultaneously. driver and output stages of audio amplifiers. collector base 3 emitter to− 92 case 29 style 17 123 straight lead bulk pack bent lead tape & reel ammo pack marking diagram bc xxx ayww bcxxx= device code = assembly location = year ww = work week = pb− free package ( note: microdot may be in either location) ordering information. here are some bc327 datasheet pdf alternative pnp transistors that can be used as a replacement for the bc327:.
general description and suggested applications: • pnp/ npnsilicon planar epitaxial transistors. applications • general purpose switching and amplification, e. description transistor ( pnp) bc327 datasheet ( html) - first silicon co. - bc327 more results similar description - bc327. onsemi bc327 technical specifications, attributes, and parameters. features • high current ( max. © fairchild semiconductor corporation www. • for complementary with npn type bc337. 8a i ( c), 45v v ( br) ceo, 1- element, pnp, silicon, to- 92. com please note: as part of the fairchild semiconductor integration, some of the fairchild orderable part numbers will need to change in order to meet on semiconductor’ s system requirements.
complement to bc337 / bc338. file size: 160kbytes. the bc327 is a small signal pnp transistor commonly used in amplification and switching applications. mosfets power modules protected mosfets rectifiers audio transistors darlington transistors esd protection diodes small signal switching diodes zener bc327 datasheet pdf diodes rf transistors rf diodes. • complementary transistors for use in driver and output stages of audio amplifiers to- 92 plastic package pin configuration 1.
trans gp bjt pnp 45v 0. download html bc327 datasheet ( pdf) - general semiconductor description small signal transistors ( pnp) bc327 datasheet ( html) - general semiconductor similar part no. 25 bipolar transistors page 3 10/ 05/ 08 v1. 0 vdc collector current ï continuous ic ï 800 madc. 0 2 typical performance characteristics trademarks.
technical specifications. units bvceo collector- emitter breakdown. description: amplifier transistors ( pnp). manufacturer: motorola, inc. description pnp transistor in a to- 92; sot54 plastic package. bc807; bc807w; bc327 45 v, 500 ma pnp general- purpose transistors rev. manufacturer: first silicon co. 0 thermal characteristics( 1) values are at ta = 25° c unless otherwise noted. datasheet get a comprehensive understanding of the electronic component by downloading its datasheet. small signal bipolar transistor, 0. 500 ma) • low voltage ( max.
bc327/ d bc327, bc327- 16, bc327- 25, bc327- 40 amplifier transistors pnp silicon features € these are pbï free devices* maximum ratings rating symbol value unit collectorï emitter voltage vceo ï 45 vdc collectorï emitter voltage vces ï 50 vdc emitterï base voltage vebo ï 5. features • pb− free packages are available* maximum ratings thermal characteristics maximum ratings are those values beyond which device damage can occur. suitable for af- driver stages and low- power output stages. - bc327 more results similar description - bc327 more results about general semiconductor. npn complement: bc337. transistor bc327 general purpose pnp 45 volt 0.
- bc327 more results similar description - bc327 more results. view datasheets for bc327 by on semiconductor and other related components here. , ltd bc327 product details general purpose application. collector dimensions minimum maximum. 06 — 17 november product data sheet type number package npn complement nxp jeita bc807 sot23 - bc817 bc807w sot323 sc- 70 bc817w bc327[ 1] sot54 ( to- 92) sc- 43a bc337 symbol parameter conditions min typ max unit vceo collector- emitter voltage open base; ic = 10ma- - − 45 v. 25 description symbol test condition minimum typical maximum unit dc current gain hfe ic = 100ma, vce = 1vsmall signal. bc327 : bcv v vceo collector- emitter voltage: bc327 : bcv v vebo emitter- base voltage - 5 v ic collector current ( dc) - 800 ma pc collector power dissipation 625 mw tj junction temperature 150 ° c tstg storage temperature bc327 datasheet pdf - 55 ~ 150 ° c symbol parameter test condition min. switching application.
features • high current : ic= - 800ma. bc327 datasheet ( pdf) - on semiconductor preview pdf download html bc327 datasheet ( pdf) - on semiconductor description amplifier transistors bc327 datasheet ( html) - on semiconductor bc327 product details amplifier transistors pnp silicon features • pb− free packages are available* similar part no. bc327 - pnp epitaxial silicon transistor is now part of to learn more about on semiconductor, please visit our website at www. datasheet: 83kb/ 1p. • dc current gain : hfe= vce= - 1v, ic= - 100ma). switching and amplifier applications. this pdf document includes all the necessary details, such as product overview, features, specifications, ratings, diagrams, applications, and more.
download supplier datasheet pdf download revision date: datasheet preview. it has a maximum collector current of 800ma and a maximum collector- emitter voltage of 45v. view all related products | download pdf datasheet.
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